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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD941F
DESCRIPTION *With TO-220F package *Low collector saturation voltage APPLICATIONS *For power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 140 140 7 3 6 14 150 -50~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=140V; IE=0 VEB=7V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V IC=0.25A ; VCE=10V 40 15 3 MIN 140 7
BD941F
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V V
0.7 1.5 50 50 250
V V A A
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD941F
Fig.2 Outline dimensions (unindicated tolerance:0.10mm)
3


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